Product Profile of Heterojunction Wideband Rf Bipolar Transistor
Heterojunction Wideband RF Bipolar Transistor is ideal for highly linear low noise driver amplifier for all RF front ends up to 5.5 GHz. The RF Bipolar Transistor is suitable for 1.9 GHz cordless phones. The Heterojunction Wideband RF Bipolar Transistor is apt for 5 - 10.5 GHz oscillators. Heterojunction Wideband RF Bipolar Transistor is based on Infineon?s reliable, high volume SiGe:C wafer technology.
Applications of Heterojunction Wideband RF Bipolar Transistor:
Driver amplifier
ISM bands 434 and 868 MHz
1.9 GHz cordless phones
CATV LNA
Transmitter driver amplifier
2.4 GHz WLAN / Bluetooth, 2.4 / 3.5 GHz WiMAX
Output stage LNA for active antennas
TV, GPS, SDARS
2.4 / 5 GHz WLAN
2.4 / 3.5 / 5 GHz WiMAX etc.
Suitable for 5 - 10.5 GHz oscillators
