Product Profile of Bipolar RF Transistor with Internal Protection Circuits
Bipolar RF Transistor with Internal Protection Circuits is suitable for portable battery-powered applications in which reduced power consumption is a key requirement. The Bipolar RF Transistor is designed in such a way that supports collector voltages up to 4.2 V. The RF Transistor is a silicon germanium carbon npn heterojunction wideband bipolar RF transistor is apt for multimedia applications such as mobile or portable TV, CATV, FM radio. Bipolar RF Transistor with Internal Protection Circuits is also suitable for ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications.
Applications of Bipolar RF Transistor with Internal Protection Circuits:
Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n, WiMax 2.5/3.5/5 GHz, UWB, Bluetooth
Satellite communication systems: Navigation [GPS, Glonass], satellite radio [SDARs, DAB] and LNB
3G/4G UMTS/LTE mobile phone applications
Multimedia applications such as mobile/portable TV, CATV, FM Radio
ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications. As discrete active mixer, amplifier in VCO`s and buffer amplifier
