Product Profile of NPN Heterojunction Wideband Bipolar RF Transistor
NPN Heterojunction Wideband Bipolar RF Transistor is designed in such a way that supports collector voltages up to 4.2 V. The Bipolar RF Transistor is fitted with internal protection circuits, which enhance robustness against ESD and high RF input power strongly. NPN Heterojunction Wideband Bipolar RF Transistor is suitable for portable battery-powered applications in which reduced power consumption is a key requirement. NPN Heterojunction Wideband Bipolar RF Transistor is ideal for ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications.
Applications of NPN Heterojunction Wideband Bipolar RF Transistor:
Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n, WiMax 2.5 / 3.5 / 5GHz, UWB, Bluetooth
Satellite communication systems: Navigation systems [GPS, Glonass], satellite radio [SDARs, DAB] and C-band LNB
Multimedia applications such as mobile/portable TV, CATV, FM radio
3G/4G UMTS/LTE mobile phone applications
ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications. As discrete active mixer, amplifier in VCOs and buffer amplifier
