Product Profile of Heterojunction Bipolar Transistor for LNA Applications
Heterojunction Bipolar Transistor for LNA Applications provides inherently good input power match as well as inherently good noise match between 2.3 and 3.5 GHz. The Bipolar Transistor is especially well-suited for portable batterypowered applications in which energy efficiency is a key requirement. The Heterojunction Bipolar Transistor is a robust low noise amplifier based on Infineon?s reliable, high volume SiGe:C technology.
Heterojunction Bipolar Transistor for LNA Applications can be used as discrete active mixer, buffer amplifier in VCOs.
Applications of Heterojunction Bipolar Transistor for LNA Applications:
Works as very low noise amplifier [LNA] in mobile and fixed connectivity applications: WLAN 802.11b/g/n, WiMAX 2.5/3.5 GHz, Bluetooth
Satellite communication systems: GNSS Navigation systems [GPS, GLONASS, COMPASS/Beidu/Galileo], Satellite radio [SDARs, DAB and C-band LNB] and C-band LNB [1st and 2nd stage LNA]
Multimedia applications such as mobile/portable TV, Mobile TV, FM Radio
3G/4G UMTS/LTE mobile phone applications
ISM applications like RKE, AMR and Zigbee
As discrete active mixer, buffer amplifier in VCOs
