Product Profile of Heterojunction Bipolar Transistor for WiFi Applications
Heterojunction Bipolar Transistor for WiFi Applications is based upon the reliable high volume SiGe:C technology of Infineon. The Bipolar Transistor is specifically designed for 5-6 GHz WiFi applications. The Bipolar Transistor provides inherently good input and output power match as well as inherently good noise match at 5-6 GHz. Heterojunction Bipolar Transistor for WiFi Applications is well-suited for portable battery powered applications in which energy efficiency is a key requirement.
Applications of Heterojunction Bipolar Transistor for WiFi Applications:
As Low Noise Amplifier [LNA] in mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n, WiMax 2.5/3.5/5 GHz, UWB, Bluetooth
Satellite communication systems: Navigation systems [GPS, Glonass], satellite radio [SDARs, DAB] and C-band LNB
Multimedia applications such as mobile/portable TV, CATV, FM Radio
As discrete active mixer, amplifier in VCOs and buffer amplifier
