Product Profile of Silicon Germanium Carbon Bipolar RF Transistor
Silicon Germanium Carbon Bipolar RF Transistor is ideal for portable battery-powered applications in which reduced power consumption is a key requirement. The Bipolar RF Transistor is fitted with internal protection circuits, which enhance robustness against ESD and high RF input power strongly. Germanium Carbon Bipolar RF Transistor is designed in such a way that supports collector voltages up to 4.1 V. Silicon Germanium Carbon Bipolar RF Transistor is ideal for mobile, portable and fixed connectivity applications.
Applications of Silicon Germanium Carbon Bipolar RF Transistor:
Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n, WiMax 2.5 / 3.5 / 5GHz, UWB, Bluetooth
Satellite communication systems: Navigation systems [GPS, Glonass], satellite radio [SDARs, DAB] and C-band LNB
Multimedia applications such as mobile/portable TV, CATV, FM radio
3G/4G UMTS/LTE mobile phone applications
ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications
As discrete active mixer, amplifier in VCOs and buffer amplifier
